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| Phototransistors PN163NC Silicon NPN Phototransistor 3.50.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm 3.00.3 1.950.25 1.40.2 0.9 0.5 For optical control systems Features High sensitivity Fast response : tr = 4 s (typ.) Adoption of visible light cutoff resin Ultraminiature, thin side-view type package o1.1 R0.5 12 min. Not soldered 2.15 max. 2-0.50.15 0.30.15 2 2.54 1 Absolute Maximum Ratings (Ta = 25C) Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50 -25 to +85 -30 to +100 Unit V mA mW C C 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO SIR tr*2 tf*2 VCE(sat) *1 Conditions VCE = 10V VCE = 10V, H = VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100 ICE(L) = 3A, H = 15W/cm2 15W/cm2 min 6 typ max 0.2 40 Unit A A nm deg. s s P 850 25 4 4 0.5 V Measurements were made using infrared light ( = 940 nm) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50 RL 1 Phototransistors PN163NC PC -- Ta 60 3.0 ICE(L) -- VCE 10 2 ICE(L) -- L ICE(L) (mA) VCE = 10V Ta = 25C T = 2856K PC (mW) 50 ICE(L) (mA) Ta = 25C T = 2856K 2.5 L = 1000 lx 10 Collector power dissipation 40 2.0 Collector photo current Collector photo current 30 1.5 500 lx 1.0 1 20 10 -1 10 0.5 100 lx 0 - 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 -2 1 10 10 2 10 3 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO -- Ta 10 2 VCE = 10V 10 2 ICE(L) -- Ta VCE = 10V T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25C ICE(L) (mA) ICEO (nA) 10 10 S (%) Relative sensitivity 0 40 80 120 80 Dark current 1 Collector photo current 60 40 1 10 -1 20 10 -2 - 20 0 20 40 60 80 100 10 -1 - 40 0 600 700 800 900 1000 1100 1200 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics 0 100 10 20 10 4 tr -- ICE(L) VCC = 10V Ta = 25C 10 4 tf -- ICE(L) VCC = 10V Ta = 25C 80 70 60 50 40 30 20 Relative sensitivity S (%) 90 30 10 3 10 3 tr (s) 40 50 60 70 80 90 10 2 tf (s) Fall time 10 2 RL = 1k 500 100 1 Rise time 10 RL = 1k 500 100 10 1 10 -1 10 -2 10 -1 1 10 10 2 10 -1 10 -2 10 -1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2 |
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